| Part Number | Frequency Band | Bias Voltage | Die Technology | Linear Gain(dB) | Ppeak(dBm) | DE(%)@MXE | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DXG1H010DE3 | DC-6G | 48 | 0.4um GaN HEMT | 24.9 | 41.0 | 83 | Released Product | |
| DXG1H030DE4 | DC-6G | 48 | 0.4um GaN HEMT | 23.8 | 45.8 | 82 | Released Product | |
| DXG1H065DE2 | DC-6G | 48 | 0.4um GaN HEMT | 23.0 | 48.7 | 82 | Released Product | |
| DXG1H080DE2 | DC-6G | 48 | 0.4um GaN HEMT | 22.4 | 49.5 | 80 | Released Product | |
| DXG1H095DE2 | DC-4G | 48 | 0.4um GaN HEMT | 22.0 | 50.6 | 80 | Released Product | |
| DXG1H135DE1 | DC-4G | 48 | 0.4um GaN HEMT | 22.0 | 52.0 | 82 | Released Product | |
| DXG1H240DE2 | DC-4G | 48 | 0.4um GaN HEMT | 21.2 | 54.8 | 81 | Released Product | |
| DXG1H260DE1 | DC-4G | 48 | 0.4um GaN HEMT | 20.7 | 55.0 | 80 | Released Product | |
| DXG1H185DE2 | DC-4G | 48 | 0.4um GaN HEMT | 20.9 | 53.6 | 81 | Released Product |
DXG1H010DE3 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H010DE3, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth,making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 12 | W |
| Maximum Drain Efficiency | 83 | % |
| Supply Voltage | 48 | V |
| Operation | 6 | GHz |
Overall die size 785 x 825 (+0 / -50) microns, die thickness 100 microns.
DXG1H030DE4 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H030DE4, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 30 | W |
| Maximum Drain Efficiency | 82 | % |
| Supply Voltage | 48 | V |
| Operation | 6 | GHz |
Overall die size 695 x 970 (+0 / -50) microns, die thickness 100 microns.
DXG1H065DE2 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H065DE2, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 65 | W |
| Maximum Drain Efficiency | 82 | % |
| Supply Voltage | 48 | V |
| Operation | 6 | GHz |
Overall die size 855 x 2005 (+0 / -50) microns, die thickness 100 microns
DXG1H080DE2 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H080DE2, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 90 | W |
| Maximum Drain Efficiency | 80 | % |
| Supply Voltage | 48 | V |
| Operation | 6 | GHz |
Overall die size 2385 x 835 (+0 / -50) microns, die thickness 100 microns
DXG1H095DE2 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H095DE2, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 95 | W |
| Maximum Drain Efficiency | 80 | % |
| Supply Voltage | 48 | V |
| Operation | 4 | GHz |
Overall die size 885 x 2585 (+0 / -50) microns, die thickness 100 microns.
DXG1H135DE1 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H135DE1, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 135 | W |
| Maximum Drain Efficiency | 82 | % |
| Supply Voltage | 48 | V |
| Operation | 4 | GHz |
Overall die size 855 x 3065 (+0 / -50) microns, die thickness 100 microns.
DXG1H240DE2 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H240DE2, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 240 | W |
| Maximum Drain Efficiency | 79 | % |
| Supply Voltage | 48 | V |
| Operation | 4 | GHz |
Overall die size 905 x 5345 (+0 / -50) microns, die thickness 100 microns
DXG1H260DE1 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H260DE1, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 260 | W |
| Maximum Drain Efficiency | 80 | % |
| Supply Voltage | 48 | V |
| Operation | 4 | GHz |
Overall die size 910 x 5795 (+0 / -50) microns, die thickness 100 microns.
DXG1H185DE2 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT).
The DXG1H185DE2, operating at 48 V, offers high efficiency, great gain, easy of matching and broad bandwidth, making the die ideal for a variety of RF and microwave applications.
| Parameter | Value | Unit |
| Nominal PSAT | 185 | W |
| Maximum Drain Efficiency | 80 | % |
| Supply Voltage | 48 | V |
| Operation | 4 | GHz |
Overall die size 975 x 3915 (+0 / -50) microns, die thickness 100 microns
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